Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material
US5298457A · kind A · utility
15Cited by
6References
16Claims
0Family size
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Key dates
| Filing date | Jul 1, 1993 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Jul 1, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The all epitaxial process starts with a high resistivity silicon substrate. Alternating layers of silicon and silicon-germanium are epitaxially grown on the substrate under conditions which create a region with misfit dislocations. A low resistivity silicon layer is then grown over the region. The material is inverted such that the high resistivity layer can be used to form the base of the device. The thickness of the high resistivity layer is adjusted to equal the width of the base of the semiconductor device to be fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.