Intrinsically doped semiconductor structure and method for making
US5298763A · kind A · utility
121Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1992 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Nov 2, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
Abstract
A semiconductor structure that provides intrinsic doping from native defects is provided. A quantum well including a narrow bandgap material (11, 14) having a low concentration of native defects is sandwiched between two wide bandgap spacer layers (12, 20, 17, 15). The spacer layers (12, 20, 17, 15) have a low concentration of native defects. At least one doping region (13, 16) having a high concentration of native defects positioned adjacent to one of the undoped spacer layers (12, 17).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.