Collector of a bipolar transistor compatible with MOS technology

US5298779A · kind A · utility

Assignee

• France Telecom Etablissement Autonome De Droit Public · FR

Inventors

• Alain Nouailhat · Meylan, FR
• Daniel Bois · Geneva, CH

Key dates

• Filing date: Feb 18, 1992
• Grant date: Mar 29, 1994
• Expiry date: Feb 18, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

A bipolar transistor comprising a semiconductor substrate, of a first conductivity type, a retrograde well serving as the collector and having a second conductivity type opposite to the first, a base active region having a first conductivity type, a region serving as an emitter of the second conductivity type, the regions being bordered on either side by insulating regions. According to the invention, the transistor includes at least one second conductivity type zone serving as the collector contact, located in a region of the retrograde well at a distance from the base zone and extending away from said base zone no further than level with the insulating zone. The invention is applicable to making BI-MOS or BI-CMOS circuits.