Gate charge recovery circuit for gate-driven semiconductor devices
US5298797A · kind A · utility
198Cited by
2References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 12, 1993 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Mar 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate charge recovery circuit prevents generation of the voltage spike that would otherwise appear across the sense resistor that is employed to detect the current flowing through the switched terminal of a gate-driven semiconductor device when the device is turned on. The gate charge recovery circuit comprises the combination of a capacitor connected between the reference terminal of the semiconductor device and the positive terminal of a driver and a filter resistor connected between the positive terminal of the driver and the positive terminal of a voltage source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.