Method for writing into semiconductor memory
US5299151A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1991 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Jun 18, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for writing into a semiconductor memory which includes a MOS transistor formed on a semiconductor substrate and an anti-fuse formed of an insulating film and an upper electrode on a drain of the MOS transistor. The method includes the steps of applying a first voltage between the upper electrode of the anti-fuse and a source of the MOS transistor to cause dielectric breakdown of the insulating film of the anti-fuse, with the MOS transistor turned on; and applying a second voltage between the upper electrode of the anti-fuse and the semiconductor substrate so that a larger amount of current flows than the amount of current required for breaking down the insulating film of the anti-fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.