Heat radiating component and semiconductor device provided with the same
US5299214A · kind A · utility
21Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1992 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Jun 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor laser is provided with a heat radiating component for radiating or dissipating heat which is generated in operation. In this heat radiating component, a polycrystalline diamond layer (3) synthesized by vapor deposition is formed on an upper surface of a stem (4). A semiconductor laser element (1) is bonded, e.g. by brazing to the surface of the vapor-deposited polycrystalline diamond layer (3) through a brazing filler metal (2). The heat radiating component has a thermal expansion coefficient which is the same as that of an LSI chip to be mounted thereon to provide an excellent heat radiating property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.