Production method of an HEMT semiconductor device
US5300445A · kind A · utility
16Cited by
6References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1992 |
| Grant date | Apr 5, 1994 |
| Priority date | — |
| Expiry date | Sep 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A particle beam irradiates a thermohardening resin and selectively hardens the thermohardening resin of the implanted region. The non-hardened resin not irradiated is removed with high selectivity and an inverted pattern of the hardened resin remains as a mask. In one embodiment, a gate electrode is produced in an aperture pattern produced by transfer of the inverted pattern and source and drain electrodes are provided at other aperture patterns to form an HEMT having a narrow gate self-aligned with the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.