Active matrix substrate for liquid-crystal display and method of fabricating the active matrix substrate
US5300449A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 16, 1992 |
| Grant date | Apr 5, 1994 |
| Priority date | — |
| Expiry date | Oct 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an active matrix substrate for a liquid-crystal display, a plurality of individual transparent electrodes are arranged in the form of an array, and an array of thin-film transistors is connected to the transparent electrodes for driving the same. Each of the thin-film transistors includes a source region and a drain region which are formed such that impurities are doped at high concentration, an active layer composed of a silicon thin film which is in contact with the source and drain regions and in which at least a part of the silicon thin film covers the source and drain regions, an insulating film which covers the source and drain regions and the active layer, and a gate electrode on the insulating film. Each of the individual transparent electrodes is composed of a silicon thin film contiguous to the active layer of the thin-film transistor and a metal silicide on the silicon thin film. In the active matrix substrate, metal silicide is formed, in the form of an island, onto the silicon thin film on the entire surface of which the individual transparent electrodes are formed. The active matrix substrate of the invention does not use a transparent conductive film made of indiu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.