Patent · US Expired

Method for producing semiconductor device

US5300453A · kind A · utility

4Cited by
5References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 10, 1993
Grant dateApr 5, 1994
Priority date
Expiry dateMar 10, 2013

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S148/062
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for producing a semiconductor device, is composed of steps of: covering a lower side of a semiconductor wafer with a heavy metal and disposing the semiconductor wafer in a chamber; causing the heavy metal to diffuse into the semiconductor wafer by heating the semiconductor wafer with a heat source having a small thermal capacity; and thereafter, ceasing to heat with the heat source, then charging the chamber with a cooling gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.