Nonvolatile semiconductor storage device with ferroelectric capacitors
US5300799A · kind A · utility
38Cited by
2References
2Claims
0Family size
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Key dates
| Filing date | Nov 6, 1992 |
| Grant date | Apr 5, 1994 |
| Priority date | — |
| Expiry date | Nov 6, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
Abstract
In an element forming region isolated from other regions by a field oxide, one select transistor and a plurality of MOS transistors are connected in series so that a source/drain diffusion region is commonly owned by two neighboring transistors. The gate electrodes of the MOS transistors are connected to the lower electrodes of ferroelectric capacitors, respectively. The gate electrode of the select transistor, and the lower electrodes and upper electrodes of the ferroelectric capacitors are led out as word lines. A metal wiring which serves as a bit line is connected to a drain diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.