Registration of patterns formed of multiple fields
US5301124A · kind A · utility
31Cited by
21References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1993 |
| Grant date | Apr 5, 1994 |
| Priority date | — |
| Expiry date | Sep 9, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A pattern is aligned and exposed with a lithography system so that chips larger than the deflection field can be formed by exposing M.times.N fields in a mosaic pattern. The method corrects the deflection field to compensate for the orientation of a previous pattern on a substrate and compensates for errors due to height caused by the beam landing non perpendicular to the target. Two basic procedures disclosed are called "3-mark" which are only applicable to 2.times.2 arrays of fields, and "M.times.N" which covers the general situation, but with slightly less accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.