Monolithic microwave power sensor using a heat sensing diode junction
US5302024A · kind A · utility
17Cited by
11References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 26, 1993 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Feb 26, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R21/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A monolithic integrated circuit power sensor provides a monolithic integrated circuit substrate, a conversion element formed either on or in the substrate for converting microwave energy into heat, and a thermally sensitive diode junction formed in sufficiently close proximity to the conversion element to be thermally coupled thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.