CVD diamond by alternating chemical reactions
US5302231A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1992 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Oct 5, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula C.sub.n X.sub.m and then with a gas having the formula C.sub.l Z.sub.p. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z--X bond is stronger than the C--X bond and also is stronger than the C--Z bond. In the formulas, n, m, l, and p are integers. If C.sub.n X.sub.m and C.sub.l Z.sub.p do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.