Method of manufacturing field effect transistor
US5302538A · kind A · utility
25Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1993 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | May 21, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When exposure light reaches a silicon oxide film, this light is multiply reflected in the silicon oxide film to spread or narrow a photoresist layer. A tungsten silicide film prevents the exposure light from reaching the silicon oxide film. This silicon oxide film is employed as a mask to selectively remove a polycrystalline silicon film and a tungsten silicide film by etching for forming a gate electrode, while the tungsten silicide film is simultaneously removed by this etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.