Metal-semiconductor ohmic contact forming process
US5302549A · kind A · utility
11Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1992 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Oct 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal semiconductor ohmic contact farming process consists of enrichment of the surface of the semiconductor on which contact is to be formed, by ion implantation of a dopant, followed by deposition of a metal film on the implanted surface and then by thermal annealing at a temperature lower than 500.degree. C. and for a period shorter than 60 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.