Monolithic, fully dense silicon carbide mirror and method of manufacturing
US5302561A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 1993 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Mar 11, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A new silicon carbide material is made following a procedure including hot pressing to provide a finished product having a microstructure with an optimal grain size of less than 7 micrometers. The material exhibits a dominant failure mode of intergranular fracture requiring significant energy for crack propagation. The method of manufacturing is cost-effective by allowing the use of "dirty" raw materials since the process causes impurities to segregate at multi-grain boundary junctions to form isolated pockets of impurities which do not affect the structural integrity of the material. End uses include use as optical and electronic substrate materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.