Redundant memory device having a memory cell and electrically breakable circuit having the same dielectric film
US5303199A · kind A · utility
44Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1991 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Feb 19, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An easily circuit-programmable semiconductor device which comprises a dynamic random access memory (DRAM) unit, a redundancy circuit and a connection between them, the DRAM unit having as a capacitor a dielectric film made of a silicon oxide/silicon nitride/silicon oxide composite layer and the connection having, as a member for programming the redundancy circuit, an electrically breakable dielectric film made of a silicon oxide/silicon nitride/silicon oxide composite layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.