Chemical vapor deposition of silicon dioxide using hexamethyldisilazane
US5304398A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1993 |
| Grant date | Apr 19, 1994 |
| Priority date | — |
| Expiry date | Jun 3, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing silicon dioxide on the surface of a substrate or the like using a nitrogen-containing precursor is disclosed herein. In a preferred implementation the deposition is performed using an atmospheric pressure reactor, into which is directed toward the substrate surface a stream of source gas comprised of ozonated oxygen. A stream of a nitrogen-containing precursor such as, for example, hexamethyldisilazane (HMDS) is also directed into the reactor toward the substrate surface. In addition, a stream of a nitrogen-containing separator gas is directed into the reactor between the streams of precursor and source gases. The inventive deposition method has been shown to result in improved film nucleation on a variety of substrate surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.