Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

US5304538A · kind A · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• Richard Vasquez · Altadena, US
• Brian D. Hunt · Oroville, US
• Marc C. Foote · La Cañada Flintridge, US

Key dates

• Filing date: Mar 11, 1992
• Grant date: Apr 19, 1994
• Expiry date: Mar 11, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S505/785

Abstract

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO.sub.3, CaVO.sub.3, and SrVO.sub.3 are grown on electron-type high temperature superconductors such as Nd.sub.1.85 Ce.sub.0.15 CuO.sub.4-x. Alternatively, transition metal bronzes of the form A.sub.x MO.sub.3 are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO.sub.3 are grown on either hole-type or electron-type high temperature superconductors.