Monolithically integrated temperature sensor for power semiconductor components
US5304837A · kind A · utility
16Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 6, 1992 |
| Grant date | Apr 19, 1994 |
| Priority date | — |
| Expiry date | Nov 6, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A temperature sensor is monolithically integrated in a semiconductor body together with a vertical power semiconductor structure. The power semiconductor structure is formed of a plurality of power cells. The temperature sensor is formed of two sensor cells that can be manufactured simultaneously with the power cells. The advantage of the invention is that a highly sensitive temperature sensor can be manufactured in process-compatible fashion together with a vertical power semiconductor structure without additional steps and in a cost-beneficial way.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.