Titanium-tungsten target material and manufacturing method thereof
US5306569A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 1992 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Jul 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A titanium-tungsten target material capable of limiting the amount of particles generated during sputtering and a method of manufacturing this titanium-tungsten material. The titanium-tungsten target material has a titanium-tungsten alloy phase which occupies 98% or more of the whole area of the material as observed in a micro-structure thereof. In one example of the manufacturing method, an ingot obtained by melting tungsten and titanium is processde by a solution treatment to form a titanium-tungsten target, or a power obtained by melting the ingot is sintered to form a target. Preferably, the melting may be performed under reduced pressure in an electron beam melting manner. In another example of the manufacturing method, a powder is formed from a molten metal by an atomization method and the obtained powder is sintered to form a titanium-tungsten target. For sintering of the powder, it is preferable to apply hot isostatic pressing or hot pressing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.