Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor
US5306660A · kind A · utility
3Cited by
13References
17Claims
0Family size
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Key dates
| Filing date | Feb 19, 1991 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Feb 19, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.