Process for forming a thin metal film by chemical vapor deposition
US5306666A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 1993 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Jul 21, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a thin metal film is formed on a substrate at a constant substrate temperature by chemical vapor deposition while alternately and discontinuously introducing a raw material gas and a reducing gas onto the substrate, reducing the raw material gas with the reducing gas on the substrate, thereby conducting chemical vapor deposition, and repeating the chemical vapor deposition to obtain a desired film thickness, a thin metal film having a good surface flatness without any current leakage can be obtained without etching the substrate wafer, and when the reducing gas is excited to excited species by an exciting means at the introduction of the reducing gas and the excited species is used be reduce the raw material gas, a lower substrate temperature can be used and chemical vapor deposition process time can be made shorter than without using the exciting means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.