Solid-state imaging device having a plurality of charge transfer electrodes formed in a serpentine pattern
US5306906A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1993 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | May 20, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
A solid-state imaging device includes: a semiconductor layer having a top surface; a plurality of first charge transfer electrodes formed on the semiconductor layer and extending in a serpentine pattern in a first direction at a prescribed cycle, the first direction being substantially parallel with the top surface of the semiconductor layer; a plurality of second charge transfer electrodes formed on the semiconductor layer and extending in a serpentine pattern in the first direction at a prescribed cycle; a plurality of charge transfer sections formed in the semiconductor layer, and extending in a serpentine pattern in a second direction, the second direction being substantially perpendicular to the first direction; and a plurality of photoelectric converters formed in areas of the semiconductor layer bounded by the first and second charge transfer electrodes, each photoelectric converter provided for generating a signal charge in response to incident light, and for supplying the signal charge to an adjacent one of the charge transfer sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.