Electrode assembly for a semiconductor device
US5306950A · kind A · utility
16Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1992 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Dec 22, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrode assembly for a semiconductor device includes a contact layer formed on a semiconductor substrate and consisting mainly of a rare-earth metal or metals, or a silicide thereof, or a mixture thereof, and a diffusion barrier layer formed on the contact layer and consisting mainly of iron or an iron alloy. The assembly is bonded to a mount by a solder layer formed on the diffusion barrier layer and consisting mainly of lead and tin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.