Multilayer aluminum-containing interconnection structure of semiconductor device
US5306952A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1992 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Oct 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum-containing interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first interconnection layer is electrically connected to a second interconnection layer through a connection hole. The second interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.