Semiconductor workpiece topography prediction method
US5307296A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1991 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Oct 4, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09B19/00
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method of predicting the topography of a semiconductor workpiece after a plurality of manufacturing processes, such as etching and film deposition, are carried out on the workpiece includes establishing a desired topography for a semiconductor workpiece after sequential performance of a plurality of processes, such as etching, are carried out on the workpiece; specifying conditions, such as temperature and etchant concentration, for each process; establishing a plurality of points in a grid in a space including the workpiece; identifying the materials comprising the workpiece and the concentration of virtual particles representing the topography of the workpiece before a first process; using the modified diffusion model equation to predict the material and concentration of virtual particles after the completion of the first process in the sequence of processes; recording the material and virtual particle concentration at the completion of the first process as a decimal number including an integer part representing the material and a decimal part representing the concentration of virtual particles; and using the modified diffusion model to predict the materials and concentration o…
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