Semiconductor laser
US5309466A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1992 |
| Grant date | May 3, 1994 |
| Priority date | — |
| Expiry date | Aug 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser, an active layer includes a semiconductor layer having the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction. By the action of the ordered structure, the electric vector of the recombination light generated in the active layer is concentrated in the (-1,1,1) plane or the (1,-1,1) plane. Alternatively, the semiconductor layer has not only the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction, but also the compressive strain in the (0,0,1) plane. By the action of the ordered structure and the compressive strain, the recombination light generated in the active layer is emitted in the (1,1,0) plane. As a result, the recombination light effectively gives a gain to the oscillation mode. Thus, the oscillation threshold current of the semiconductor laser is reduced, and the laser characteristics is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.