Laser diode for producing an output optical beam in a direction substantially perpendicular to epitaxial layers
US5309468A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 14, 1992 |
| Grant date | May 3, 1994 |
| Priority date | — |
| Expiry date | May 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode for producing an optical beam in a direction substantially perpendicular to epitaxial layers. The laser diode comprises a substrate, a disc-shaped active layer provided epitaxially on the substrate for producing an optical beam as a result of the stimulated emission, a disc-shaped contact layer provided epitaxially on the active layer for injecting carriers into the active layer, an optical confinement layer provided on the substrate to surround the active layer and the contact layer laterally for confining the optical beam in the active layer, a convex mirror part provided on a lower major surface of the substrate for reflecting back the optical beam such that the optical beam is converged to the active layer, an opposing mirror part provided in correspondence to an upper major surface of the contact layer, a first electrode provided on the contact layer for injecting carriers of a first polarity, a second electrode provided on the lower major surface of the substrate for injecting carriers of a second polarity, and an optical passage provided in correspondence to the spherical surface of the convex lens part for emitting the optical beam as a parallel beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.