Monitoring optical gain of semiconductor optical amplifier
US5309469A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1992 |
| Grant date | May 3, 1994 |
| Priority date | — |
| Expiry date | Oct 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In this invention, a semiconductor device designed for use as an optical amplifier is provided with three sections; an input section, a middle section and an output section. A continuous optical waveguide extends through the input section, the middle section and the output section and the three sections are electrically isolated from each other. More specifically, a semiconductor laser amplifier is electrically split into three separate sections by implanting ions of, for example, hydrogen, helium or fluorine into the areas of the semiconductor amplifier which are between the middle section and the two end sections. The ion implantation provides a high degree of electrical isolation between the various sections, but it does not alter the continuity of the optical waveguide which passes through the three sections. In operation, each section is coupled to a bias source to forward bias the device, and the ratio of the voltages on the two end sections induced by the optical signal is proportional to the gain of the semiconductor amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.