Multi-layer superhard film structure
US5310596A · kind A · utility
15Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1991 |
| Grant date | May 10, 1994 |
| Priority date | — |
| Expiry date | Dec 18, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A multi-layer diamond film is grown by d.c. arc assisted plasma deposition. A series of layers are deposited on each other by periodically back-etching the surface and renucleating during deposition. There may also be deposited a thin layer of non-diamond carbon material between the diamond layers, but no other non-carbon material. Renucleation is controlled by varying the proportion of methane to hydrogen in the feed gases, by temperature cycling of the substrate, or by inducing modal changes in the arc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.