Apparatus for the coating of material on a substrate using a microwave or UHF plasma
US5311103A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1992 |
| Grant date | May 10, 1994 |
| Priority date | — |
| Expiry date | Jun 1, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved radiofrequency wave apparatus (10) which provides a relatively large diameter (on the order of magnitude 500 millimeters) plasma (56) for the coating of a material on a surface of a substrate (50) is described. The apparatus has a movable stage (54), which is used to change the position of the substrate with respect to the plasma. The radiofrequency waves are preferably microwaves or UHF waves (2.45 GHz or 915 MHg). The apparatus has a probe (30) which is mounted along the longitudinal axis (A--A) through a sliding short (16). The apparatus operates in the TM mode and is particularly useful for uniformly coating a relatively large surface of the substrate (or a number of smaller surfaces of substrates at the same time) with a material which is formed in the plasma. The apparatus has been used for depositing diamond films on a number of substrates (Si, Si.sub.3 N.sub.4 and the like).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.