Semiconductor flow sensor
US5311775A · kind A · utility
11Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1991 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Dec 12, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01F1/6845
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The flow rate sensor is made from a silicon substrate (1). A first face (A) of the substrate is provided with a heating element (2) disposed in a first region (R1) and with at least one thermometer component (4) disposed in a second region (R2), the first and second regions being insulated from each other by a third zone (R3) of oxidized porous silicon. According to the invention, the sensor is adapted to receive the flow of fluid (E) over the second face (B) of the substrate (1), with the first and second regions (R1, R2) forming respective thermal short circuits between the first and second faces (A, B) of said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.