Method of doping a semiconductor substrate
US5312764A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1993 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | May 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of decoupling a step for modulating a defect density from a step for modulating a junction depth. A semiconductor substrate (30) having a portion doped with a dopant (34) is heated to a pre-oxidation anneal temperature in a pre-oxidation anneal step (23). After the pre-oxidation anneal step (23), the semiconductor substrate (30) undergoes an oxidation step (25) which serves as a step for modulating the defect density. Subsequent to the oxidation step (25), the semiconductor substrate (30) undergoes a drive-in step (27) which serves as a step for modulating the junction depth. Then, the temperature of the semiconductor substrate (30) is lowered to allow further processing of the semiconductor substrate (30).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.