Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer
US5312771A · kind A · utility
259Cited by
6References
8Claims
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Key dates
| Filing date | Apr 6, 1993 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Apr 6, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/004
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optical annealing method for a semiconductor layer provided on a substrate comprises irradiating a base member provided with a semiconductor layer and an absorbing layer for incoherent light across an insulating layer, with incoherent light followed by patterning the absorbing layer to form a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.