Method for manufacturing a semiconductor device comprising titanium
US5312774A · kind A · utility
30Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1992 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Dec 3, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) ##STR1## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.