Process for the preparation of a high dielectric thin film using ECR plasma CVD
US5312783A · kind A · utility
23Cited by
1References
3Claims
0Family size
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Key dates
| Filing date | May 28, 1992 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | May 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the preparation of a high dielectric thin film. A tantalum oxide film is formed on a substrate at a temperature of from 400.degree. to 850.degree. C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method. A high dielectric film having little leakage current, good surface flatness and good step coverage is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.