Partitioning method for E-beam lithography
US5313068A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1992 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Jan 8, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of partitioning design shapes, in an E-beam lithography system, into subshapes such that a constant dose may be applied to an E-beam sensitive resist within each subshape. Within each subshape the constant dose corresponds to an approximation to an indicator function, indicative of the degree of the proximity effect, such as the effective exposure of the resist from backscattered electrons or the required dose. The error of the approximation is equal to a predetermined value for each subshape, and can depend upon the position of the subshape within the shape and the influence of errors in the applied dose at that position on the position, on development, of the edge of the shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.