R.F. switching circuits
US5313083A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 1993 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Jun 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An advanced MESFET switching structure which includes an interdigitated source region and an interdigitated drain region, also includes a gate electrode region disposed between adjacent portions of the interdigitated source and drain regions having a series gate electrode in Schottky barrier contact therewith. The use of the series connect gate electrode rather than conventional parallel coupled gate fingers eliminates the need for an airbridge overlays to interconnect the source regions as in a conventional MESFET transducer. Moreover, the topography permits smaller MESFET structures and thus higher integration of circuits employing the advanced MESFET switch structure. The smaller transistors will also have lower parasitic reactances. In a preferred embodiment, all interconnections for drain, gate, and source electrodes are disposed on the active layer portion of the transistor providing an even smaller transistor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.