Method for making free-standing diamond film
US5314652A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Nov 10, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/0254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for making a free-standing synthetic diamond film of desired thickness, including the following steps: providing a substrate; selecting a target thickness of diamond to be produced, the target thickness being in the range 200 microns to 1000 microns; finishing a surface of the substrate to a roughness, R.sub.A, that is a function of the target thickness, the roughness being determined from ##EQU1## where t is the target thickness; depositing an interlayer on the substrate, the interlayer having a thickness in the range 1 to 20 microns; depositing synthetic diamond on the interlayer, by chemical vapor deposition, to about the target thickness; and cooling the synthetic diamond to effect the release thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.