Chemical vapor deposition of iron, ruthenium, and osmium
US5314727A · kind A · utility
46Cited by
15References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Jul 28, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO).sub.4 ML or (b): M.sub.2 [.mu.-.eta.:.eta..sup.4 -C.sub.4 ](CO).sub.6 ; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.