Thin film mask for use in an x-ray lithographic process and its method of manufacture by forming opaque pattern of ions in a diamond layer
US5314768A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 19, 1993 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Mar 19, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film mask for use in an X-ray lithographic process is disclosed herein along with a method of making the mask which is comprised of a diamond thin film layer supported on one surface of an X-ray transparent non-diamond substrate, for example silicon. A predetermined pattern of ions of a substance opaque to X-rays, for example a heavy atomic number substance such as gold, tungsten or cesium, is introduced into the diamond thin film layer as opposed to being deposited thereon. In one embodiment disclosed herein, this is accomplished by means of ion implantation, and in a second embodiment by means of an ion beam direct write device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.