Method for making a semiconductor laser
US5314838A · kind A · utility
24Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Sep 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a method for manufacturing a vertical cavity, surface-emitting laser. The method includes growing a distributed Bragg reflector having at least 10 layers of alternating composition on a gallium arsenide substrate. The growth surface of the substrate is tilted by an angle of 1.degree.-7.degree. from the orientation of a (100) surface toward the orientation of a (111)A surface. This results in improved reflectivity of the DBR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.