Method for manufacturing a semiconductor device using a heat treatment according to a temperature profile that prevents grain or particle precipitation during reflow
US5314848A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1991 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Sep 24, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described is a method for manufacturing semiconductor devices which includes a heat treating process for heating and cooling semiconductor substrates mounted on a boat at a predetermined pitch according to a predetermined temperature profile, in order to flatten the surface of each semiconductor substrate by reflowing an insulating film containing impurities, for example, a BPSG film formed on the substrate. In the heat treating process, one of the control factors which affects the formation of grains or particles due to the impurities contained in the insulating film is set so as to prevent the impurities from generating grains or particles during the heat treatment. Also disclosed is a method of preventing the generation of grains or particles by widening the pitch of the mounted substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.