Formation of superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition
US5314866A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 1989 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | May 16, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/742
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.