Semiconductor device for emitting highly spin-polarized electron beam
US5315127A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Apr 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2203/0296
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy s…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.