Low intermodulation distortion FET amplifier using parasitic resonant matching
US5315265A · kind A · utility
7Cited by
3References
2Claims
0Family size
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Key dates
| Filing date | Dec 11, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Dec 11, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/193
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF power FET amplifier is designed using parasitic resonant matching to reduce low intermodulation distortion. An input inductor is connected in parallel with the capacitance of the common-source input capacitance, an output inductor is connected in parallel with the common-source output capacitance. Feedback provided by the common-source capacitance between gate and drain is utilized to improve linearization and stability. The field effect transistor is designed so that the feedback signal resulting from the feedback capacitance is 180.degree. with respect to the forward gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.