Magnetoresistance effect element
US5315282A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 21, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Jan 21, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element including a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces and each of the magnetic thin layers and the non-magnetic layer has a thickness of not larger than 200 .ANG., which has a large magnetoresistance ratio of several % to several ten % at a small external magnetic field of several Oe to several ten Oe and can provide a MR sensor having a high sensitivity and a MR head which achieves high density magnetic recording.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.