Method for manufacturing semiconductor light-receiving elements
US5316956A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1993 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Feb 1, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
Abstract
A method for manufacturing semiconductor light-receiving elements is provided. The method includes the steps of forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate, forming a p-type layer in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer, and separating the n-InP substrate on which the p-type layer has been formed into semiconductor light-receiving elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.