Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device
US5316972A · kind A · utility
20Cited by
11References
43Claims
0Family size
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Key dates
| Filing date | Jun 17, 1992 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Jun 17, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In forming a deposited film composed mainly of Al according to the CVD method utilizing gas of alkyl aluminum hydride, hydrogen gas, and if desired, further gas containing Si atoms, film formation is carried out by shifting the deposition rate from a low deposition rate to a high deposition rate. According to this method, excellent selectivity is exhibited and also a film excellent in flatness can be deposited at a high deposition rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.